bss84w p-channel enhancement mode mosfet features applications maximum ratings rating symbol value units this is a p-channel, enhancement-mode mosfet, housed in the industry- standard, sot-323 (sc-70) package. this device is ideal for portable applications where board space is at a premium. low on-resistance available in lead-free plating (100% matte tin finish) low gate threshold voltage fast switching switching power supplies hand-held computers, pdas drain-source voltage drain-gate voltage (note 1) gate-source voltage drain current total power dissipation (note 2) operating junction temperature range storage temperature range 8/12/2005 page 1 www.panjit.com - 50 v v - 50 v 20 ma 130 200 mw c -55 to +150 c -55 to +150 v v v i p t t dss dgr gss d d stg t = 25c unless otherwise noted j j note 2. fr-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout sot- 323 thermal characteristics characteristic symbol units thja thermal resistance, junction to ambient (note 2) 625 value r c/w note 1. r < 20k ohms gs marking code: 84w 3 3 1 2 gate 12 drain sourc e
ds v = -25v, i = -0.1a ds gs v = 20v, v = 0v www.panjit.com 8/12/2005 page 2 electrical characteristics parameter symbol min units drain-source breakdown voltage t = 25c unless otherwise noted conditions typ max bv dss d i = -250a, v = 0v zero gate voltage drain curren t i ds s v = -50v, v = 0v, t =25c ds gate-body leakage -50 - - v - - -15 - - -60 a - 10 na - bss84w -0.1 -- off characteristics (note 3) i gss ds ds v = -50v, v = 0v, t =125c v = -25v, v = 0v, t =25c gs gs gs j j j j d parameter symbol min units gate threshold voltage conditions typ max v gs(th) ds v = v , i = -1ma forward transconductance -0.8 -1.44 -2.0 v on characteristics (note 3) g fs gs d 0.05 - - s static drain-source on-resistanc e r ds(on) gs v = -5v, i = -0.1a - 3.8 10 ohms d parameter symbol min units input capacitance conditions typ max c iss reverse transfer capacitance - - 45 pf dynamic characteristics c rss - -12pf output capacitance c oss ds v = -25v, v = 0v, f = 1.0mhz - - 25 pf gs parameter symbol min units turn-on delay time conditions typ max t d(on) - 7.5 - ns switching characteristics turn-off delay time - 25 - ns t d(off) v = -30v, i = -0.27a, r = 50ohm, v = -10v dd d gen gs note 3. short duration test pulse used to minimize self-heating gs
bss84w 0.01 0.1 1 10 0.4 0.6 0.8 1 1.2 1.4 -v sd - source-to-drain voltage (v) -i s - source current (a) 25 o c v gs = 0v 0.8 0.9 1 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t j - junction temperature ( o c) v gs threshold voltage (normalize d i d =250 a 0 2 4 6 8 10 246810 -v gs - gate-to-source voltage (v) r ds(on) - on-resistance (ohms ) ids=-50ma ids =- 500ma 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 -i d - drain current (a) r ds(on) - on-resistance (ohms ) v gs = 4.5v v gs =10.0v 0 0.2 0.4 0.6 0.8 1 01234567 -v gs - gate-to-source voltage (v) -i d - drain source current (a ) v ds =10v 25 o c 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 012345 -v ds - drain-to-source voltage (v) -i d - drain-to-source current (a ) v gs = 6v, 7v, 8v, 9v, 10v 3.0v 4.0v 5.0v electrical characteristic curves t = 25c unless otherwise noted j fig. 1. output characteristics fig. 2. transfer characteristics fig. 6. sourse-drain diode forward voltage fig. 5. threshold voltage vs. temperature fig. 3. on-resistance vs. drain current fig. 4. on-resistance vs. g-s voltage www.panjit.com 8/12/2005 page 3
www.panjit.com 8/12/2005 page 4 bss84w ordering information bss84w t/r7 - 7 inch reel, 3k units per reel bss84w t/r13 - 13 inch reel, 10k units per reel copyright panjit international, inc 2005 the information presented in this document is believed to be accurate and reliable. the specifications and information herein are subject to change without notice. pan jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. pan jit products are not authorized for use in life support devices or systems. pan jit does not convey any license under its patent rights or rights of others. package layout and suggested pad dimensions
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